Datasheet4U Logo Datasheet4U.com

FGPF70N30 - PDP IGBT

General Description

Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss.

FGPF70N30 offers the optimum solution for PDP applications where low-condution loss is essential.

.

Key Features

  • High Current Capability.
  • Low saturation voltage: VCE(sat) =1.4V @ IC = 40A.
  • High Input Impedance.
  • Fast switching.
  • RoHS Complaint General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FGP3040G2-F085 N-Channel IGBT ON Semiconductor
FGP30B Glass Passivated Ultrafast Rectifier Vishay
FGP30C Glass Passivated Ultrafast Rectifier Vishay
FGP30D Glass Passivated Ultrafast Rectifier Vishay
FGP3440G2-F085 N-Channel IGBT ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FGPF70N30T 70A PDP IGBT
FGPF70N30TTU 70A PDP IGBT
FGPF7N60LSD Low Saturation IGBT CO-PAK
FGPF7N60RUFD RUF IGBT CO-PAK
FGPF10N60UNDF IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FGPF70N30 300V, 70A PDP IGBT October 2006 FGPF70N30 300V, 70A PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.4V @ IC = 40A • High Input Impedance • Fast switching • RoHS Complaint General Description Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution loss is essential. Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.