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Fairchild Semiconductor Electronic Components Datasheet

FJD5555 Datasheet

NPN Silicon Transistor

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FJD5555
NPN Silicon Transistor
June 2013
Features
• Fast Speed Switching
• Wide Safe Operating Area
• High Voltage Capability
Application
• Electronic Ballast
• Switch Mode Power Supplies
1
B
1
Marking : J5555
1. Base 2. Collector 3. Emitter
C2
E3
Ordering Information
Part Number
FJD5555TM
Marking
J5555
Package
D-PAK
Packing Method
Tape & Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
BVCBO
BVCEO
BVEBO
IC
ICP
IB
IBP
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Junction Temperature
Storage Junction Temperature Range
1050
V
400
V
14
V
5
A
10
A
2
A
4
A
150
°C
- 55 to +150
°C
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
Rθja(1)
Rθjc(2)
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
TA = 25°C
TC = 25°C
Value
1.34
100
95
1.25
Units
W
W
°C/W
°C/W
Notes:
1. Rθja test board and fixture under natural convection; JESD51-3 recommended thermal test board.
2. Rθjc test fixture under infinite cooling condition.
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FJD5555 Datasheet

NPN Silicon Transistor

No Preview Available !

Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
BVCBO
BVCEO
BVEBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
Cob
tON
tSTG
tF
tON
tSTG
tF
EAS
Note:
Base-Emitter Saturation Voltage
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Turn-On Time
Storage Time
Fall Time
Avalanche Energy
3. Pulse test: pulse width 300 μs, duty cycle 2%.
Conditions
IC = 500 μA, IE = 0
IC = 5 mA, IB = 0
IE = 500 μA, IC = 0
VCE = 5 V, IC = 10 mA
VCE = 3 V, IC = 0.8 A
IC = 1 A, IB = 0.2 A
IC = 3.5 A, IB = 1.0 A
IC = 3.5 A, IB = 1.0 A
VCB = 10 V, f = 1 MHz
VCC = 125 V, IC = 0.5 A,
IB1 = 45 mA, IB2 = -0.5 A,
RL = 250 Ω
VCC = 250 V, IC = 2.5 A,
IB1 = 0.5 A, IB2 = -1.0 A,
RL = 100 Ω
L = 2 mH
Min.
1050
400
14
10
20
6
Typ.
0.17
45
0.3
Max.
40
0.50
1.5
1.2
1.0
1.2
2.0
2.5
0.3
Units
V
V
V
V
V
V
pF
μs
μs
μs
μs
μs
μs
mJ
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
2
www.fairchildsemi.com



Part Number FJD5555
Description NPN Silicon Transistor
Maker Fairchild Semiconductor
Total Page 3 Pages
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FJD5555 Datasheet PDF





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