FJD5555 Overview
·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Base Breakdown Voltage IC=500uA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-2...
