FJD5553 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 500uA;.