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Fairchild Semiconductor Electronic Components Datasheet

FJV42 Datasheet

NPN High Voltage Transistor

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FJV42
NPN High Voltage Transistor
March 2007
3
2
1 SOT-23
Marking: 1DF
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
TSTG
Storage Temperature Range
PC Collector Power Dissipation
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* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Value
350
350
6
500
-55~150
350
Thermal Characteristics
Symbol
Parameter
RTH(j-a)
Thermal Resistance, Junction to Ambiet
Value
357
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Ccb
Parameter
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain*
Collector-Emitter Saturation Voltage *
Base-Emitter Breakdown Voltage *
Current Gain - Bandwidth Product
Output Capacitance
Test Condition
IC = 5.0 mA, IB = 0
IC = 100 uA, IE = 0
IE = 100 uA, IC = 0
VCB = 200 V, IE = 0
VEB = 5.0 V, IC = 0
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
IC = 10 mA, VCE = 20V, f =100 MHz
VCB = 20 V, IE = 0, f = 1.0 MHz
* Pulse Test: PW300µs, Duty Cycle2%
MIN
350
350
6
25
40
40
50
Units
V
V
V
mA
°C
mW
Units
°C/W
MAX
0.1
0.1
Units
V
V
V
uA
uA
0.5 V
0.9 V
MHz
3 pF
©2007 Fairchild Semiconductor Corporation
FJV42 Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FJV42 Datasheet

NPN High Voltage Transistor

No Preview Available !

Typical Characteristics
1000
VCE = 10V
100
10
1 10
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
100
100
IE = 0
f = 1MHz
10
1
0.1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Base Capacitance
10
1 VBE(sat)
0.1 VCE(sat)
IC = 10 IB
0.01
1
10 100
IC[mA], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
120
100
VCE = 20V
80
60
40
20
0
1 10 100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
FJV42 Rev. A
2 www.fairchildsemi.com


Part Number FJV42
Description NPN High Voltage Transistor
Maker Fairchild Semiconductor
Total Page 4 Pages
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