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FQA10N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQA10N60C
Manufacturer: Fairchild Semiconductor
File Size: 648.67 KB
Datasheet: FQA10N60C-FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

FQA10N60C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V.
Low gate charge ( typical 44 nC).
Low Crss ( typical 18 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability G DS TO-3PN FQA Series G! D !.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Dr.

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