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FQA13N50C - 500V N-Channel MOSFET

Description

These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology.

Features

  • 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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  • G! TO-3PN GSD FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current Drain Current - Continuous (.

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Datasheet Details

Part number FQA13N50C
Manufacturer Fairchild Semiconductor
File Size 860.13 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet FQA13N50C Datasheet
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FQA13N50C QFET FQA13N50C 500V N-Channel MOSFET General Description These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-stat e resistance, provide superior swit ching performance, and wit hstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high ef ficiency swit ched mode pow er supplies, active power factor cor rection, elec tronic lamp ballasts based on half bridge topology. ® Features • • • • • • 13.5A, 500V, RDS(on) = 0.
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