FQA13N50CF
Overview
A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A Low Gate Charge (Typ. 43 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested Fast Recovery Body Diode (Typ. 100 ns) This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
