FQA13N50CF - 500V N-Channel MOSFET

Fairchild (now onsemi)

General Description

15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A

Low Gate Charge (Typ.

Low Crss (Typ.

100% Avalanche Tested

Fast Recovery Body Diode (Typ.

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FQA13N50CF 500v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQA13N50CF
Manufacturer	Fairchild (now onsemi)
File Size	1.89 MB
Description	500V N-Channel MOSFET
Datasheet	FQA13N50CF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA13N50CF — N-Channel QFET® FRFET® MOSFET FQA13N50CF May 2014 N-Channel QFET® FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Typ. 100 ns) This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.