Datasheet Summary
QFET
500V N-Channel MOSFET
General Description
These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-stat e resistance, provide superior swit ching performance, and wit hstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high ef ficiency swit ched mode pow er supplies, active power factor cor rection, elec tronic lamp ballasts based on half bridge topology.
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Features
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- - 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss...