FQA13N50C Description
These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-stat e resistance, provide superior swit ching performance, and wit hstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high ef ficiency swit ched mode pow er...
FQA13N50C Key Features
- 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% a