Description
These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology.
Features
- 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3PN
GSD
FQA Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current Drain Current - Continuous (.
FQA13N50C Datasheet
