FQA13N50C
Overview
These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-stat e resistance, provide superior swit ching performance, and wit hstand high energy pulse in the avalanche and commutation mode.
- 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
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- G! TO-3PN GSD FQA Series ! S
