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FQA13N80_F109 Datasheet - Fairchild Semiconductor

MOSFET

FQA13N80_F109 Features

* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A

* Low Gate Charge (Typ. 68 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS

FQA13N80_F109 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA13N80_F109 Datasheet (1.99 MB)

Preview of FQA13N80_F109 PDF

Datasheet Details

Part number:

FQA13N80_F109

Manufacturer:

Fairchild Semiconductor

File Size:

1.99 MB

Description:

Mosfet.

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FQA13N80_F109 MOSFET Fairchild Semiconductor

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