FQA13N80_F109 Key Features
- 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
- Low Gate Charge (Typ. 68 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
- Part: FQA13N80_F109
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 1.99 MB
Other FQA13N80_F109 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FQA13N80-F109 | N-Channel MOSFET |