FQA13N80-F109 Overview
Description
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
- Low Gate Charge (Typ. 68 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested D G G D S TO-3PN
