Datasheet4U Logo Datasheet4U.com

FQA13N80-F109 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FQA13N80-F109 — N-Channel QFET® MOSFET FQA13N80-F109 N-Channel QFET® MOSFET 800 V, 12.

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max. ) @ VGS = 10 V, ID = 6.3 A.
  • Low Gate Charge (Typ. 68 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re.

FQA13N80-F109 Distributor & Price

Compare FQA13N80-F109 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from onsemi

Part Number Description
FQA10N80C-F109 N-Channel QFET MOSFET
FQA11N90-F109 N-Channel MOSFET
FQA11N90C-F109 N-Channel MOSFET
FQA24N60 N-Channel MOSFET
FQA6N90C-F109 N-Channel MOSFET
FQA90N15-F109 N-Channel MOSFET
FQA9N90-F109 N-Channel MOSFET
FQA9N90C-F109 N-Channel QFET MOSFET