FQA13N80-F109 - N-Channel MOSFET

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ON Semiconductor

Part number	FQA13N80-F109
Manufacturer	ON Semiconductor
File Size	1.84 MB
Description	N-Channel MOSFET
Datasheet	FQA13N80-F109 Datasheet
Additional preview pages of the FQA13N80-F109 datasheet.

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

12.6 A, 800 V, RDS(on) = 750 mΩ (Max. ) @ VGS = 10 V, ID = 6.3 A.
Low Gate Charge (Typ. 68 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re.

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Published: Dec 20, 2024 |