FQA7N80C Key Features
- 7.0A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 10pF) Fast switching 100% ava
- Part: FQA7N80C
- Manufacturer: Fairchild (official site)
- Size: 794.62 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQA7N80C_F109 | N-Channel MOSFET |
| FQA7N80 | 800V N-Channel MOSFET |
| FQA7N60 | 600V N-Channel MOSFET |
| FQA7N65C | 650V N-Channel MOSFET |
| FQA7N90 | 900V N-Channel MOSFET |
FQA7N80C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...