FQA8N100C Key Features
- RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
- Low Gate Charge (Typ. 53 nC)
- Low Crss (Typ. 16 pF)
- 100% Avalanche Tested
- Part: FQA8N100C
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 1.53 MB
Other FQA8N100C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FQA8N100C | N-Channel MOSFET |