FQA90N08 mosfet equivalent, 80v n-channel mosfet.
* 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 200 pF)
* 100% Avalanche Tested
* 175°C Max.
Features
* 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A
* Low Gate Charge (Typ. 84 nC)
* Low C.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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