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FQAF11N90C Datasheet - Fairchild Semiconductor

MOSFET

FQAF11N90C Features

* 7.0 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 3.5 A

* Low Gate Charge (Typ. 60 nC)

* Low Crss (Typ. 23 pF)

* 100% Avalanche Tested D G D S TO-3PF Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

FQAF11N90C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQAF11N90C Datasheet (830.44 KB)

Preview of FQAF11N90C PDF

Datasheet Details

Part number:

FQAF11N90C

Manufacturer:

Fairchild Semiconductor

File Size:

830.44 KB

Description:

Mosfet.

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FQAF11N90C MOSFET Fairchild Semiconductor

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