FQAF7N60 mosfet equivalent, 600v n-channel mosfet.
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* 5.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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