FQB10N50CF Datasheet (N-Channel MOSFET)

Part: FQB10N50CF
Manufacturer: Fairchild (official site)
Size: 528.52 KB

FQB10N50CF Key Features

10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A
Low gate charge ( Typ. 45 nC)
Low Crss ( Typ. 17.5 pF)
100% avalanche tested
Fast recovery body diode
Continuous Continuous
Pulsed
Derate above 25oC
55 to +150
N-Channel QFET® FRFET® MOSFET

Other FQB10N50CF Datasheets

Manufacturer	Part Number	Description
onsemi	FQB10N50CF	N-Channel MOSFET

View all FQB10N50CF datasheets →

FQB10N50CF Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...