FQB10N50CF
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A
- Low gate charge ( Typ. 45 nC)
- Low Crss ( Typ. 17.5 pF)
- 100% avalanche tested
- Fast recovery body diode
