FQB10N50CF Datasheet | Fairchild Semiconductor

Features - 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A - Low gate charge ( Typ. 45 n C) - Low Crss ( Typ. 17.5 p F) - 100% avalanche tested - Fast recovery body diode Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D2-PAK MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Continuous (TC (TC = = 25o C) 100o C) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQB10N50CFTM_WS 500 ±30 10 6.35 40 825 10 14.3 2.0 143 1.14 -55 to...