FQB10N50CF Overview
Key Specifications
Package: TO-252-3
Mount Type: Surface Mount
Pins: 3
Max Operating Temp: 150 °C
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A
- Low gate charge ( Typ. 45 nC)
- Low Crss ( Typ. 17.5 pF)
- 100% avalanche tested
- Fast recovery body diode
