| Part Number | FQB10N50CF Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A * Low gate charge ( Typ. 45 nC) * Low Crss ( Typ. 17.5 pF) * 100% avalanche tested * Fast recovery body diode Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMO. |
FQB10N50CF Datasheet and Specifications PDF
The FQB10N50CF is a N-Channel MOSFET.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FQB10N50CF Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A * Low gate charge ( Typ. 45 nC) * Low Crss ( Typ. 17.5 pF) * 100% avalanche tested * Fast recovery body diode Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe . |