FQB10N50CF Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FQB10N50CF - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

10 A, 500 V, RDS(on) = 610 mΩ (Max. ) @ VGS = 10 V, ID = 5 A.
Low gate charge ( Typ. 45 nC).
Low Crss ( Typ. 17.5 pF).
100% avalanche tested.
Fast recovery body diode.

Datasheet Details

Part number	FQB10N50CF
Manufacturer	Fairchild Semiconductor
File Size	528.52 KB
Description	N-Channel MOSFET
Datasheet	FQB10N50CF Datasheet
Additional preview pages of the FQB10N50CF datasheet.

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Full PDF Text Transcription

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FQB10N50CF — N-Channel QFET® FRFET® MOSFET FQB10N50CF N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 610 m October 2013 Features • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A • Low gate charge ( Typ. 45 nC) • Low Crss ( Typ. 17.5 pF) • 100% avalanche tested • Fast recovery body diode Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Published: Sep 14, 2015 |