Fairchild Semiconductor FQB10N50CF
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQB10N50CF |
|---|---|
| Datasheet | FQB10N50CF Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A● Low gate charge ( Typ. 45 nC)
● Low Crss ( Typ. 17.5 pF)
● 100% avalanche tested
● Fast recovery body diode
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S D2-PAK G S MOSFETMAXIMUM RATINGS
TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Continuous (TC (TC = = 25oC) 100oC) Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQB10N50CFTM_WS 500 ±30 10 6.35 40 825 10 14.3 2.0 143 1.14 -55 to +150 300 Thermal Char...
