FQB22P10TM_F085 Datasheet 100v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB22P10TM_F085 100V P-Channel MOSFET February 2009 QFET ® FQB22P10TM_F085 100V P-Channel.

Datasheet Details

Part number	FQB22P10TM_F085
Manufacturer	Fairchild (now onsemi)
File Size	693.77 KB
Description	100V P-Channel MOSFET
Datasheet	FQB22P10TM_F085_FairchildSemiconductor.pdf

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

-22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant D D G S G D2-PAK FQB Series TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS ID S FQB22P10TM_F085 -100 -22 -15.6 Units V A A A V mJ A mJ.

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