Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology.
Features
- -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V.
- Low gate charge ( typical 40 nC).
- Low Crss ( typical 160 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 175°C maximum junction temperature rating.
- Qualified to AEC Q101.
- RoHS Compliant
D
D
G S D2-PAK
FQB Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Drain-S.
FQB22P10TM-F085 Datasheet
