FQB22P10TM-F085 - P-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FQB22P10TM-F085
Manufacturer	ON Semiconductor
File Size	0.99 MB
Description	P-Channel MOSFET
Datasheet	FQB22P10TM-F085 Datasheet
Additional preview pages of the FQB22P10TM-F085 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology.

-22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V.
Low gate charge ( typical 40 nC).
Low Crss ( typical 160 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating.
Qualified to AEC Q101.
RoHS Compliant D D G S D2-PAK FQB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-S.

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Published: Jan 23, 2023 |