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FQB25N33TM-F085 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FQB25N33TM-F085 330V N-Channel MOSFET FQB25N33TM-F085 330V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Key Features

  • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V.
  • Low gate charge (typical 58nC).
  • Low Crss (typical 40pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant General.

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