FQB25N33TM-F085 Datasheet | onsemi

FQB25N33TM-F085 330V N-Channel MOSFET FQB25N33TM-F085 330V N-Channel MOSFET Features - 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V - Low gate charge (typical 58nC) - Low Crss (typical 40pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Qualified to AEC Q101 - RoHS pliant General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for...