FQB44N08 Key Features
- 44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% av
- Part: FQB44N08
- Manufacturer: Fairchild (official site)
- Size: 673.81 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQB44N10 | 100V N-Channel MOSFET |
| FQB45N15V2 | 150V N-Channel MOSFET |
| FQB46N15 | 150V N-Channel MOSFET |
| FQB47P06 | 60V P-Channel MOSFET |
| FQB4N20 | 200V N-Channel MOSFET |
FQB44N08 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, high...