FQB5N50C Key Features
- 5 A, 500 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 15 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FQB5N50C
- Manufacturer: Fairchild (official site)
- Size: 495.84 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQB5N50CF | N-Channel MOSFET |
| FQB5N50 | 500V N-Channel MOSFET |
| FQB5N15 | 150V N-Channel MOSFET |
| FQB5N20 | 200V N-Channel MOSFET |
| FQB5N20L | 200V LOGIC N-Channel MOSFET |
FQB5N50C Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...