FQB5N50C mosfet equivalent, n-channel mosfet.
* 5 A, 500 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A
* Low Gate Charge (Typ. 18 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested
* RoHS Co.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
Image gallery
TAGS
Download (Size : 495.84KB)