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📁 Related Datasheet

FQB6N15 - N-Channel MOSFET (VBsemi)
FQB6N15-VB FQB6N15-VB Datasheet N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VGS = 10 V .

FQB6N25 - 250V N-Channel MOSFET (Fairchild Semiconductor)

 
 

 
 
  
  
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FQB6N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

 
 

 
 
  
  
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FQB6N40C - 400V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N40C — N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.0 Ω November 2013 Description These N-Channel enhancement mode powe.

FQB6N45 - 450V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N45 / FQI6N45 January 2001 QFET FQB6N45 / FQI6N45 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .

FQB6N50 - 500V N-Channel MOSFET (Fairchild Semiconductor)

 
 

 
 
  
  
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FQB6N60 - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N60 / FQI6N60 April 2000 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.

FQB6N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N80 / FQI6N80 September 2000 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec.

FQB6N90 - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQB6N90 / FQI6N90 December 2000 QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect.

FQB60N03L - N-Channel Logic Level PWM Optimized Power MOSFET (Fairchild Semiconductor)
FQB60N03L October 2002 FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET tech.