FQB7N10L Datasheet | Fairchild Semiconductor

FQB7N10L / FQI7N10L December 2000 QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D Features - - - - - - - - 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss (...