FQB7N60 - 600V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQB7N60
Manufacturer	Fairchild Semiconductor
File Size	885.94 KB
Description	600V N-Channel MOSFET
Datasheet	FQB7N60 Datasheet
Additional preview pages of the FQB7N60 datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

7.4 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @VGS = 10 V, ID = 3.7 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche En.

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Published: Apr 1, 2005 |