FQB7N60 Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

FQB7N60 Features

* 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 16 pF)

* 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM

FQB7N60 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQB7N60 Datasheet (885.94 KB)

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Datasheet Details

Part number:

FQB7N60

Manufacturer:

Fairchild Semiconductor

File Size:

885.94 KB

Description:

600v n-channel mosfet.

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FQB7N60 600V N-Channel MOSFET Fairchild Semiconductor

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FQB7N60 Features

FQB7N60 General Description

Datasheet Details

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Description:

FQB7N60 Distributor