FQB7N60 - N-Channel MOSFET

onsemi

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

7.4 A, 600 V, RDS(on) = 1.0 W (Max. ) @ VGS = 10 V, ID = 3.7 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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FQB7N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQB7N60
Manufacturer	onsemi
File Size	398.68 KB
Description	N-Channel MOSFET
Datasheet	FQB7N60 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, QFET 600 V, 7.4 A, 1.0 W FQB7N60, FQI7N60 Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ.