FQB7N60 Overview
This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp...
FQB7N60 Key Features
- 7.4 A, 600 V, RDS(on) = 1.0 W (Max.) @ VGS = 10 V, ID = 3.7 A
- Low Gate Charge (Typ. 29 nC)
- Low Crss (Typ. 16 pF)
- 100% Avalanche Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current
- Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalan
- Power Dissipation (TC = 25°C)
- Derate above 25°C
