FQB7N60 Datasheet | Fairchild Semiconductor

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features - 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A - Low Gate Charge (Typ. 29 n C) - Low Crss (Typ. 16 p F) - 100% Avalanche Tested D2-PAK I2-PAK Absolute Maximum Ratings TC = 25o C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQB7N60TM FQB7N60TM_WS FQI7N60TU 600 7.4 4.7 29.6 ±30 580 7.4 14.2 4.5 3.13 142 1.14 -55 to...