FQB7P06 Datasheet | Fairchild Semiconductor

FQB7P06 / FQI7P06 May 2001 QFET FQB7P06 / FQI7P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. Features - - - - - - - -7A, -60V, RDS(on) = 0.41Ω @VGS = -10 V Low gate charge ( typical 6.3 n C) Low Crss ( typical 25 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G ! - - ▶ ▲ - S D2-PAK FQB Series I2-PAK FQI...