Datasheet4U Logo Datasheet4U.com

FQB8P10 - P-Channel MOSFET

General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • -8.0 A, -100 V, RDS(on) = 530 mΩ (Max. ) @ VGS = -10 V, ID = -4.0 A.
  • Low Gate Charge (Typ. 12 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage E.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQB8N60C N-Channel MOSFET ON Semiconductor
FQB020ADC-007-M EMC Filters TDK-Lambda
FQB020ADC-007-S EMC Filters TDK-Lambda
FQB020ADC-N07-M EMC Filters TDK-Lambda
FQB020ADC-N07-S EMC Filters TDK-Lambda

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQB85N06 60V N-Channel MOSFET
FQB8N25 250V N-Channel MOSFET
FQB8N60C 600V N-Channel MOSFET
FQB8N60CF 600V N-Channel MOSFET
FQB8N90C N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQB8P10 — P-Channel QFET® MOSFET FQB8P10 P-Channel QFET® MOSFET -100 V, -8.0 A, 530 mΩ November 2018 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -8.0 A, -100 V, RDS(on) = 530 mΩ (Max.) @ VGS = -10 V, ID = -4.0 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ.