FQB8P10
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 8.0 A, -100 V, RDS(on) = 530 mΩ (Max.) @ VGS = -10 V, ID = -4.0 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
