FQB8P10 Overview
Key Specifications
Package: D2PAK
Mount Type: Surface Mount
Height: 5.08 mm
Max Operating Temp: 175 °C
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 8.0 A, -100 V, RDS(on) = 530 mΩ (Max.) @ VGS = -10 V, ID = -4.0 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D
