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FQB9N30 - N-Channel MOSFET

Fairchild Semiconductor

FQB9N30 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100.

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Datasheet Details

Part number: FQB9N30
Manufacturer: Fairchild Semiconductor
File Size: 673.58 KB
Datasheet: FQB9N30_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Fairchild Semiconductor

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FQB9N30 Stock/Price