FQB9N30 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FQB9N30 Features

* 9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB9N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB9N30 Datasheet (673.58 KB)

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Datasheet Details

Part number:

FQB9N30

Manufacturer:

Fairchild Semiconductor

File Size:

673.58 KB

Description:

N-channel mosfet.

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FQB9N30 N-Channel MOSFET Fairchild Semiconductor

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FQB9N30 Features

FQB9N30 General Description

Datasheet Details

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