FQB9N08L Datasheet | Fairchild Semiconductor

FQB9N08L / FQI9N08L June 2000 QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D Features - - - - - - - - 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.7 n C) Low Crss ( typical 16 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirments allowing direct operation from logic drives ! " G! ! " " " D2-PAK FQB Series I2-PAK FQI...