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FQB9N50CF - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V.
  • Low gate charge ( typical 28nC).
  • Low Crss ( typical 24pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.

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Datasheet Details

Part number FQB9N50CF
Manufacturer Fairchild Semiconductor
File Size 773.51 KB
Description N-Channel MOSFET
Datasheet download datasheet FQB9N50CF Datasheet
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FQB9N50CF 500V N-Channel MOSFET October 2006 FRFET FQB9N50CF 500V N-Channel MOSFET Features • 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V • Low gate charge ( typical 28nC) • Low Crss ( typical 24pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D G G S D2-PAK FQB Series www.
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