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FQB9N50CF Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB9N50CF 500V N-Channel MOSFET October 2006 FRFET FQB9N50CF 500V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Key Features

  • 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V.
  • Low gate charge ( typical 28nC).
  • Low Crss ( typical 24pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.

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