FQD10N20L
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 14 pF)
- 100% Avalanche Tested
- Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S
- D-PAK
