FQD10N20L mosfet equivalent, n-channel mosfet.
* 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A * Low Gate Charge (Typ. 13 nC) * Low Crss (Typ. 14 pF) * 100% Avalanche Tested * Low .
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