Datasheet4U Logo Datasheet4U.com

FQD10N20L - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max. ) @ VGS = 10 V, ID = 3.8 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuo.

📥 Download Datasheet

Datasheet preview – FQD10N20L

Datasheet Details

Part number FQD10N20L
Manufacturer Fairchild Semiconductor
File Size 813.16 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD10N20L Datasheet
Additional preview pages of the FQD10N20L datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD10N20L — N-Channel QFET® MOSFET FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ.
Published: |