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FQD10N20L Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD10N20L — N-Channel QFET® MOSFET FQD10N20L N-Channel QFET® MOSFET 200 V, 7.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max. ) @ VGS = 10 V, ID = 3.8 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuo.

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