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FQD11P06 - 60V P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQD11P06
Manufacturer: Fairchild Semiconductor
File Size: 1.22 MB
Datasheet: FQD11P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

FQD11P06 Product details

Description

This P-Channel enhancement mode power.

Features

-9.4 A, -60 V, RDS(on) = 185 mΩ (Max. ) @ VGS = -10 V, ID = -4.7 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche En.

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60V P-Channel MOSFET Fairchild Semiconductor

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