FQD12N20 - 200V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

• 9 A, 200 V, RDS(on) = 280 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A.
• Low Gate Charge (Typ. 18 nC).
• Low Crss (Typ. 18 pF).
• 100% Avalanche Tested.
• RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter.
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