FQD13N06 60V N-Channel MOSFET

Fairchild Semiconductor

FQD13N06 Description

FQD13N06 * N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQD13N06 Features

* 10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A
* Low Gate Charge (Typ. 5.8 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

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Datasheet Details

Part number: FQD13N06
Manufacturer: Fairchild Semiconductor
File Size: 812.13 KB
Datasheet: FQD13N06_FairchildSemiconductor.pdf
Description: 60V N-Channel MOSFET

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60V N-Channel MOSFET Fairchild Semiconductor

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