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FQD13N06TM - 60V N-Channel MOSFET

This page provides the datasheet information for the FQD13N06TM, a member of the FQD13N06 60V N-Channel MOSFET family.

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A.
  • Low Gate Charge (Typ. 5.8 nC).
  • Low Crss (Typ. 15 pF).
  • 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

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Datasheet preview – FQD13N06TM

Datasheet Details

Part number FQD13N06TM
Manufacturer Fairchild Semiconductor
File Size 812.13 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FQD13N06TM Datasheet
Additional preview pages of the FQD13N06TM datasheet.

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FQD13N06 — N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A • Low Gate Charge (Typ. 5.8 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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