FQD13N06TM Datasheet | Fairchild Semiconductor

FQD13N06 - N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features - 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A - Low Gate Charge (Typ. 5.8 n C) - Low Crss (Typ. 15 p F) - 100% Avalanche...