FQD13N06 Datasheet 60v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD13N06 — N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November.

Datasheet Details

Part number	FQD13N06
Manufacturer	Fairchild (now onsemi)
File Size	812.13 KB
Description	60V N-Channel MOSFET
Datasheet	FQD13N06_FairchildSemiconductor.pdf

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A.
Low Gate Charge (Typ. 5.8 nC).
Low Crss (Typ. 15 pF).
100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

FQD13N06 Distributor

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