FQD13N06TM Datasheet | Fairchild Semiconductor

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features - 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A - Low Gate Charge (Typ. 5.8 n C) - Low Crss (Typ. 15 p F) - 100% Avalanche Tested D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQD13N06TM 60 10 6.3 40 ± 25 85 10 2.8 7.0 2.5 28 0.22 -55 to +150 Unit V A A A V m J A m J V/ns W W W/°C °C °C Thermal Characteristics...