FQD13N06TM, FQD13N06 - 60V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD13N06TM, FQD13N06
Manufacturer	Fairchild ↗ Semiconductor
File Size	812.13 KB
Description	60V N-Channel MOSFET
Datasheet	FQD13N06_FairchildSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FQD13N06TM, FQD13N06. Please refer to the document for exact specifications by model.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A.
Low Gate Charge (Typ. 5.8 nC).
Low Crss (Typ. 15 pF).
100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

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Published: Aug 3, 2015 |