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Fairchild Semiconductor Electronic Components Datasheet

FQD13N06TM Datasheet

60V N-Channel MOSFET

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FQD13N06TM pdf
FQD13N06
N-Channel QFET® MOSFET
60 V, 10 A, 140 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
10 A, 60 V, RDS(on) = 140 m(Max.) @ VGS = 10 V,
ID = 5.0 A
• Low Gate Charge (Typ. 5.8 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
D
G
S
D
D-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD13N06TM
60
10
6.3
40
± 25
85
10
2.8
7.0
2.5
28
0.22
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD13N06TM
4.5
110
50
Unit
oC/W
©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQD13N06TM Datasheet

60V N-Channel MOSFET

No Preview Available !

FQD13N06TM pdf
Package Marking and Ordering Information
Part Number
FQD13N06TM
Top Mark
FQD13N06
Package
DPAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ.
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
60 --
-- 0.06
-- --
-- --
-- --
-- --
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.0 A
VDS = 25 V, ID = 5.0 A
2.0 --
-- 0.11
-- 4.9
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 240
-- 90
-- 15
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 6.5 A,
RG = 25
VDS = 48 V, ID = 13 A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
5
25
8
15
5.8
2.0
2.5
Max.
--
--
1
10
100
-100
4.0
0.14
--
310
120
20
20
60
25
40
7.5
--
--
Unit
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A
trr Reverse Recovery Time
VGS = 0 V, IS = 13 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 990 µH, IAS = 10 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 13 A, di/dt 300 A/us, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 10 A
-- -- 40 A
-- -- 1.5 V
-- 39 -- ns
-- 40 -- nC
©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
2
www.fairchildsemi.com


Part Number FQD13N06TM
Description 60V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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