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FQD13N06TM - 60V N-Channel MOSFET

Download the FQD13N06TM datasheet PDF. This datasheet also covers the FQD13N06 variant, as both devices belong to the same 60v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 10 A, 60 V, RDS(on) = 140 mΩ (Max. ) @ VGS = 10 V, ID = 5.0 A.
  • Low Gate Charge (Typ. 5.8 nC).
  • Low Crss (Typ. 15 pF).
  • 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQD13N06_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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FQD13N06 — N-Channel QFET® MOSFET FQD13N06 N-Channel QFET® MOSFET 60 V, 10 A, 140 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A • Low Gate Charge (Typ. 5.8 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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