FQD13N10 - 100V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQD13N10
Manufacturer	Fairchild Semiconductor
File Size	619.06 KB
Description	100V N-Channel MOSFET
Datasheet	FQD13N10 Datasheet
Additional preview pages of the FQD13N10 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

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Published: Apr 1, 2005 |