FQD13N10 Datasheet, Fairchild Semiconductor

*
*
*
*
*
* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested.

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features
*
*

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.