FQD13N10 Datasheet - Fairchild Semiconductor

100V N-Channel MOSFET

FQD13N10 Features

* 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abso

FQD13N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD13N10 Datasheet (619.06 KB)

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Datasheet Details

Part number:

FQD13N10

Manufacturer:

Fairchild Semiconductor

File Size:

619.06 KB

Description:

100v n-channel mosfet.

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FQD13N10 100V N-Channel MOSFET Fairchild Semiconductor

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FQD13N10 Features

FQD13N10 General Description

Datasheet Details

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