FQD17N08L Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features - - - - - - - 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 n C) Low Crss ( typical 29 p F) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirements allowing direct operation from logic drives ! " G! G S ! " " " D-PAK FQD Series I-PAK FQU Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD17N08L / FQU17N08L 80 12.9 8.2 51.6 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) 100 12.9 4.0 6.5 2.5 40 0.32 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient - Thermal Resistance, Junction-to-Ambient Typ ---Max 3.13 50 110 Units °C/W °C/W...