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FQD18N20V2 Datasheet - Fairchild Semiconductor

200V N-Channel MOSFET

FQD18N20V2 Features

* 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abso

FQD18N20V2 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD18N20V2 Datasheet (615.01 KB)

Preview of FQD18N20V2 PDF

Datasheet Details

Part number:

FQD18N20V2

Manufacturer:

Fairchild Semiconductor

File Size:

615.01 KB

Description:

200v n-channel mosfet.

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FQD18N20V2 200V N-Channel MOSFET Fairchild Semiconductor

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