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* 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche teste.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQD20N06

FQD20N06L

FQD20N06LE

FQD20N10

FQD2N100

FQD2N30

FQD2N40

FQD2N50

FQD2N50B

FQD2N60

FQD2N60C

FQD2N80

FQD2N90