FQD2N50B Datasheet 500v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD2N50B / FQU2N50B May 2000 QFET FQD2N50B / FQU2N50B 500V N-Channel.

Datasheet Details

Part number	FQD2N50B
Manufacturer	Fairchild (now onsemi)
File Size	597.16 KB
Description	500V N-Channel MOSFET
Datasheet	FQD2N50B_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Key Features

1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 4.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

FQD2N50B Distributor

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