Datasheet4U Logo Datasheet4U.com

FQD3N60 - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 2.4A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

📥 Download Datasheet

Datasheet preview – FQD3N60

Datasheet Details

Part number FQD3N60
Manufacturer Fairchild Semiconductor
File Size 575.95 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQD3N60 Datasheet
Additional preview pages of the FQD3N60 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD3N60 / FQU3N60 April 2000 QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 2.4A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.
Published: |