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FQD3P50TM_F085 Datasheet 500v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD3P50TM_F085 500V P-Channel MOSFET November 2010 FQD3P50TM_F085 500V P-Channel.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for electronic lamp ballast based on complimentary half bridge.

Key Features

  • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V.
  • Low gate charge ( typical 18 nC).
  • Low Crss ( typical 9.5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant S D! GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuo.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FQD3P50TM-F085 500V P-Channel MOSFET ON Semiconductor

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