FQD3P50TM_F085 - 500V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQD3P50TM_F085
Manufacturer	Fairchild Semiconductor
File Size	1.02 MB
Description	500V P-Channel MOSFET
Datasheet	FQD3P50TM_F085 Datasheet
Additional preview pages of the FQD3P50TM_F085 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V.
Low gate charge ( typical 18 nC).
Low Crss ( typical 9.5 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
Qualified to AEC Q101.
RoHS Compliant S D! GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuo.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 15, 2015 |