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FQD4P25 Datasheet 250v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD4P25 / FQU4P25 December 2000 QFET FQD4P25 / FQU4P25 250V P-Channel.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.

These devices are well suited for high efficiency switching DC/DC converters.

Key Features

  • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! !.
  • ▶ ▲.
  • G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.

More Datasheets from Fairchild (now onsemi)

Part Number Description
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FQD4N20 200V N-Channel MOSFET
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FQD4N25 250V N-Channel MOSFET
FQD4N50 500V N-Channel MOSFET
FQD10N20 200V LOGIC N-Channel MOSFET
FQD10N20C 200V N-Channel MOSFET
FQD10N20L N-Channel MOSFET
FQD11P06 60V P-Channel MOSFET

FQD4P25 Distributor