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* -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tes.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQD4P25

FQD45N03L

FQD4N20

FQD4N20L

FQD4N25

FQD4N50

FQD4N60

FQD4N65

FQD10N20

FQD10N20C

FQD10N20L

FQD11P06

FQD12N06